分享给好友:
Handbook for III-V High Electron Mobility Transistor Technologies 第1 版本
Handbook for III-V High Electron Mobility Transistor Technologies
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
430 pages
| 介质类型 | 图书 Paperback Book (平装胶订图书) |
| 已发行 | 2020年12月18日 |
| ISBN13 | 9780367729240 |
| 出版商 | Taylor & Francis Ltd |
| 页数 | 444 |
| 商品尺寸 | 150 × 220 × 10 mm · 775 g |
| 语言 | 英语 |
| 编辑 | Ajayan, J. |
| 编辑 | Nirmal, D. |
