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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Viktor Sverdlov Softcover reprint of the original 1st ed. 2011 edition
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预计送达时间 年6月23日 - 年7月3日
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
252 pages, 50 Tables, black and white; XIV, 252 p.
| 介质类型 | 图书 Paperback Book (平装胶订图书) |
| 已发行 | 2016年8月23日 |
| ISBN13 | 9783709119334 |
| 出版商 | Springer Verlag GmbH |
| 页数 | 252 |
| 商品尺寸 | 150 × 220 × 10 mm · 455 g |
| 语言 | 德语 |